Development of sample-temperature-variable, ultra-high-vacuum prober unit with a maximum temperature of 900 °C

May 30th, 2014

Features of the compact, sample-temperature-variable, ultra-high-vacuum prober unit developed this time

Yoshihiro Aiura (Leader) and Hiroshi Bando (Chief Senior Researcher), Oxide Electronics Group, the Electronics and Photonics Research Institute (Director: Satoshi Haraichi) of the National Institute of Advanced Industrial Science and Technology (AIST; President: Ryoji Chubachi) have developed a compact ultra-high-vacuum prober unit incorporating a variable-temperature thin-profile sample stage with a maximum heating temperature of 900 °C, in collaboration with Riko International Ltd. (President: Koshin Miyata).

Lately, in the research fields for innovative electronic devices based on new materials and new principles, the need for electrical property evaluation under extreme environmental conditions, including ultra-high-vacuum, ultra-low-temperature, and high-temperature, is increasing. The temperature range of the compact, sample-temperature-variable, ultra-high-vacuum prober unit developed this time ranges from -123 °C to 900 °C, while being able to make measurements under ultra-high-vacuum conditions, to the order of 10^-8 Pa, and is expected to contribute to research in these fields.

Figure 1 : Downsizing, lightening, and cost reduction of prober unit using wobble-stick-type probe holder

Lately, in the research fields for innovative electronic devices based on new materials and new principles, the need for electrical property evaluation under extreme environmental conditions, including ultra-high-vacuum, ultra-low-temperature, and high-temperature, is increasing. The temperature range of the compact, sample-temperature-variable, ultra-high-vacuum prober unit developed this time ranges from -123 °C to 900 °C, while being able to make measurements under ultra-high-vacuum conditions, to the order of 10-8 Pa, and is expected to contribute to research in these fields.

Figure 2 : Sample stage supporting mechanism suppressing thermal displacement by its symmetrical structure enabling continuous measurement of thermal dependence

In the present study, a heating mechanism reaching 900 °C incorporating high-temperature ceramic heaters was developed. However, this heater was originally designed for heating under atmospheric conditions and faced issues in heat uniformity, contact with the sample stage, thermal expansion differences, etc., when it was used in a vacuum. These issues have been overcome by coating the heater with a high melting point metal film, and by maintaining contact between the sample stage and the heater using a spring supporting mechanism. This has resulted in the development of a thin-profile sample stage heating mechanism with an effective area of 25 mm square, a thickness of 13 mm, and a maximum heating temperature of 900 °C.

Provided by Advanced Industrial Science and Technology