Near-ultraviolet inverse photoemission spectroscopy: New method to examine unoccupied states of solid materials

Assisistant Professor Hiroyuki Yoshida demonstrated, for the first time, that the unoccupied states of solid materials can be precisely examined by detecting the near-ultraviolet light following the injection of ultra-low energy electrons. This technique is especially suitable for examining the unoccupied states of organic semiconductors because of low sample damage and high resolution. The new method will be used as a standard technique in the research and development of organic semiconductor materials and devices. The result is published in "Chem. Phys. Lett.".
In organic semiconductor devices, the electronic properties and device performances are determined by the frontier energy levels. Of the frontier electronic states, the valence states, in which holes moves, have been intensively examined by photoemission spectroscopy (PES). In contrast, the study of the unoccupied states, which electrons go through, has been limited due to the lack of suitable experimental methods. To obtain a complete understanding of the operating principle of the devices, both the valence and unoccupied states are equally important.
The unoccupied states can be examined by inverse photoemission spectroscopy (IPES), which is a complimentary of PES. In previous IPES, either X-ray (hv > 1 keV) or vacuum ultraviolet (VUV; hv ≈ 10 eV) photons has been detected following the injection of electrons with energies of 10 - 1000 eV into solid materials. The high energy electrons can damage the organic samples preventing further analysis of the unoccupied states. Also, the energy resolution is limited to about 0.5 eV due to the difficulty of detecting X-ray or VUV photons with high resolution and sensitivity. Surprisingly, such instruments have been used without any fundamental improvement since the late 1970s.
We have demonstrated inverse photoemission spectroscopy in the near-ultraviolet (NUV) range for the first time (Fig. 1). Detection of NUV photons allows us to use high resolution optical bandpass filters that improve the energy resolution to 0.27 eV, comparable with the best-achieved values of the existing apparatus. By detecting NUV light, measurements can be made with ultra-low energy electrons having a kinetic energy less than 4 eV, reducing the damage to the organic samples by a factor of at least 1/100 as shown in Fig.2. As a result of high resolution and low sample damage, the unoccupied states of organic materials can be precisely examined.

This new method is expected to be widely used as a standard technique for screening new organic materials in developing organic semiconductor devices, such as organic light-emitting diodes (OLED) and organic photovoltaic cells. Further, precise and reliable information on the unoccupied states is indispensable to improve existing devices or develop new ones. The new method can greatly speed up the development of organic semiconductor devices.
More information:
Hiroyuki Yoshida, Near-ultraviolet inverse photoemission spectroscopy using ultra-low energy electrons. Chemical Physics Letters. 8 May 2012. doi:10.1016/j.cplett.2012.04.058
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