A novel package for high power density SiC power modules
A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for more chip parallel connections within the same packaging area, thereby significantly increasing the power density of SiC power modules. The fabrication method of the stacked DBC packaging units also enhances production efficiency.
Reviewing the shortcomings of the conventional 2D layout power module, work appearing in CES Transactions on Electrical Machines and Systems proposed a packaging method that multiple DBC-staked units for SiC power modules.
DBC units and power module are introduced, and multiple connection cases between different DBCs are provided. Experimental and simulation results show that the proposed package module has the following advantages:
- The design of multiple DBC-staked units package is innovative, which can effectively reduce parasitic inductance and have good electrical performance.
- Current carrying capacity is increased, and under the same current, the proposed module's flat area can be reduced, allowing more chips to be parallel.
- Compared with planar packaging, the proposed module has a simple process and reduced cost, and units design can also improve productivity.
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Connect through connectors, connect through DBC itself and Stacked terminal. Credit: CES Transactions on Electrical Machines and Systems -
Proposed multiple power module with DBC-staked units packaging. Credit: CES Transactions on Electrical Machines and Systems -
Professor Ning conducting experiments at the Key Laboratory of High Density Electromagnetic Power and Systems, Institute of Electrical Engineering, Chinese Academy of Sciences (IEE CAS). Credit: CES Transactions on Electrical Machines and Systems
Future outlook
In the future, to further exploit the advantages of the DBC-staked package, four points should be noted. First, to reduce the parasitic parameters and balance the parallel devices in the gate path, the positions of the gate terminals can be designed in the center layout of the power module.
Second, when the current rating is increased, the transfer interconnection should be carefully designed. Third, for power modules operating at >1,000 A, the use of multiple power terminals at the same electrical point should be considered to increase reliability.
Finally, because hybrid structures may increase the number of packaging steps, the manufacturing capability and cost should be considered for production.
More information:
Xiaoshuang Hui et al, A Novel Multiple DBC-staked units Package to Parallel More Chips for SiC Power Module, CES Transactions on Electrical Machines and Systems (2024). DOI: 10.30941/CESTEMS.2024.00010
Provided by CES Transactions on Electrical Machines and Systems