Semiconductor research breakthrough is a first for UK
Researchers at the Centre for Integrated Semiconductor Materials (CISM) at Swansea University have made a significant breakthrough in semiconductor research by establishing the first 4-inch thin film gallium oxide (Ga₂O₃) capability in the UK. This is a type of next generation semiconductor material that can more efficiently support the high voltages, power densities, and frequencies required for applications in electric vehicles, renewable energy sources, and 5G communications.
This advance was achieved using a newly commissioned AIXTRON close-coupled showerhead deposition system, that can precisely produce or 'grow' high-quality crystalline thin film gallium oxide on 4-inch substrates, known as wafers, which have been tested and shown to be very uniform and of extremely high quality.
This state-of-the-art capability is housed in the new Oxide and Chalcogenide Metalorganic Chemical Vapor Deposition (MOCVD) Laboratory at CISM, which is now set to become a national hub for thin film gallium oxide research and development in areas such as power electronics, deep-UV photodetectors and transparent conductive oxide applications.
This significant milestone is key to the development of more efficient, compact, and cost-effective electronic devices, and also demonstrates the increasing semiconductor manufacturing and innovation capabilities of the South Wales advanced semiconductor cluster CSconnected with globally leading semiconductor manufacturing companies such as Vishay, KLA, Microchip and IQE. The achievement is also timely given the recent announcement of a £250M investment by Vishay supported by the UK Government's Automotive Transformation Fund in it's Newport plant to dramatically expand advanced wide band gap power semiconductor component manufacturing.
Professor John Heffernan of the National Epitaxy Facility, which supports semiconductor research in UK universities, said,
"Swansea University's MOCVD capability is now accessible to researchers through direct collaboration. Researchers can also gain access to feasibility studies through Swansea partnering with the UK National Epitaxy Facility's Pump Priming scheme. This initiative ensures that academic and industrial partners can leverage Swansea's expertise in epitaxial thin film growth to accelerate their research and technology development.'
Dr. Dan Lamb, Research Lead at the Oxide and Chalcogenide MOCVD Centre at Swansea University said,
"This new facility represents a major step forward for our research, and I'm incredibly excited about the possibilities it unlocks for novel materials and device development. With this advanced equipment, we can push the boundaries of our existing work while also creating new opportunities for collaboration with research groups across the UK and beyond."
Sam Evans, Director of Quality Assurance and External Affairs, Vishay Newport, said,
"This is a major step forward for wide band gap materials innovation in our South Wales Semiconductor Cluster, underpinning efforts to grow regional manufacturing in advanced power electronics such as Vishay's recently announced £250M investment in SiC component expansion."
The deposition system was funded by a £2.7m grant from the Engineering and Physical Sciences Research Council (EPSRC—Strategic Equipment Programme), reinforcing the UK's commitment to advancing semiconductor innovation.
Provided by Swansea University